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| STF13NK50Z STP13NK50Z, STW13NK50Z N-channel 500 V, 0.40 , 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type STF13NK50Z STP13NK50Z STW13NK50Z VDSS 500 V 500 V 500 V RDS(on) max ID Pw 30 W 140 W 140 W TO-220 1 2 3 <0.48 11 A <0.48 11 A <0.48 11 A 3 1 2 TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. Internal schematic diagram TO-247 2 1 3 Applications Switching application Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs. Table 1. Device summary Order code Marking F13NK50Z P13NK50Z W13NK50Z Package TO-220FP TO-220 TO-247 Packaging Tube Tube Tube STF13NK50Z STP13NK50Z STW13NK50Z March 2009 Rev 2 1/15 www.st.com 15 Contents STx13NK50Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 STx13NK50Z Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM(2) PTOT dv/dt(3) VISO TJ Tstg Absolute maximum ratings Value Parameter TO-220, TO-247 Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sin (t=1 s;TC= 25 C) Operating junction temperature Storage temperature -55 to 150 11 6.93 44 140 1.12 4.5 2500 500 30 11(1) 6.93(1) 44(1) 30 0.24 TO-220FP V V A A A W W/C V/ns V Unit C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 11 A, di/dt 200 A/s, VDD 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-a Tl Thermal data Value Parameter TO-220 Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 62.5 0.89 50 300 TO-247 TO-220FP 4.17 62.5 C/W C/W C Unit Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting TJ = 25 C, ID = IAR, VDD= 50 V) Value 11 240 Unit A mJ 3/15 Electrical characteristics STx13NK50Z 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDS = Max rating, VDS = Max rating, TC =125 C VGS = 20 V VDS= VGS, ID = 100 A VGS= 10 V, ID= 6.5 A 3 3.75 0.4 Min. 500 1 50 Typ. Max. Unit V A A A V IDSS IGSS VGS(th) RDS(on) 10 4.5 0.48 Table 6. Symbol gfs (1) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =15 V, ID = 6.5 A VDS =25 V, f=1 MHz, VGS=0 Min. Typ. 8.5 1600 200 45 50 47 9 28 2.3 Max. Unit S pF pF pF pF nC nC nC Ciss Coss Crss Equivalent output Coss eq(2). capacitance Qg Qgs Qgd Rg Total gate charge Gate-source charge Gate-drain charge Intrinsic gate resistance VGS=0, VDS =0 V to 400 V VDD=400 V, ID = 13 A VGS =10 V Figure 20 f= 1 MHz open drain 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=400 V, ID=6.5 A, RG=4.7 , VGS=10 V Figure 19 Min. Typ. 18 23 61 24 Max. Unit ns ns ns ns 4/15 STx13NK50Z Electrical characteristics Table 8. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11 A, VGS=0 ISD=6.5 A, di/dt = 100 A/s, VDD=40 V, Tj=25 C Figure 21 ISD=6.5 A, di/dt = 100 A/s, VDD=40 V, Tj=150 C Figure 21 380 3.4 18 425 3.9 18.5 Test conditions Min Typ. Max 11 44 1.6 Unit A A V ns C A ns C A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% Table 9. Symbol Gate-source Zener diode Parameter Test conditions Igs=1 mA (open drain) Min. 30 Typ. Max. Unit V BVGSO (1) Gate-source breakdown voltage 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 5/15 Electrical characteristics STx13NK50Z 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/15 STx13NK50Z Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/15 Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature STx13NK50Z Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 8/15 STx13NK50Z Test circuit 3 Test circuit Figure 20. Gate charge test circuit Figure 19. Switching times test circuit for resistive load Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 9/15 Package mechanical data STx13NK50Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 STx13NK50Z Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/15 Package mechanical data STx13NK50Z TO-220FP mechanical data mm Dim. Min. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 3.6 16.4 9.3 3.2 Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.5 5.2 2.7 10.4 L7 E A B Dia L6 L5 F1 F2 F D H G1 G L2 L 3 L4 7012510_Rev_J 12/15 STx13NK50Z Package mechanical data TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S 13/15 Revision history STx13NK50Z 5 Revision history Table 10. Date 07-Aug-2007 19-Mar-2009 Revision history Revision 1 2 First version Update ID value test condition in Table 6. Changes 14/15 STx13NK50Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15 |
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